The SENDURO®MEMS is designed for fully automated, precise and repeatable measurement of film thickness, refractive index, and extinction coefficient of materials relevant to MEMS and sensor fabrication.

The fully automated thin film quality control tool, SENTECH SENDURO®MEMS is a measurement tool for quality control in sensors, rf/power devices, SAW filters, and MEMS production. The tool provides reliable and precise measurement of thin film stacks, using spectroscopic reflectometry and ellipsometry. Wafers are loaded from standard cassettes and recipes carry out the quality control measurements. The tool is designed to measure film thicknesses, control deposition processes by measuring refractive indices of thin films, and prepare surface trimming for filters.

SENTECH Cluster Tools comprise plasma etching and / or deposition modules, transfer chamber and vacuum load lock or cassette station for flexibiliy in wafer handling.

SENTECH Cluster Configurations can be used to process a large variety of substrates from 100 mm wafers up to 200 mm in diameter. The systems offer different levels of automation ranging from vacuum cassette loading to a one-process chamber for up to a six-port cluster configuration, with different etch and deposition modules offering high flexibility and high throughput. All SENTECH Cluster Systems are controlled by advanced hardware and SIA operating software, with a client-server architecture. A well-proven, reliable programmable logic controller (PLC) is used for the real-time control of all components.

The SENTECH SI 500 uses an inductively coupled plasma (ICP) source with low ion energy for low-damage etch and nanostructuring.

Due to low ion energy and narrow ion energy distribution, low-damage etch and nanostructuring can be performed with the SI 500 ICP-RIE Plasma Etch System. High-rate plasma etching of Si for MEMS with a high aspect ratio is easily performed either using room temperature alternating processes or cryogenic processes for smooth side walls. The SENTECH Planar Triple Spiral Antenna (PTSA) plasma source is a unique, high-end plasma process system feature of the SENTECH SI 500 ICP-RIE Plasma Etch System. The PTSA source generates uniform plasma with high ion density and low ion energy suited for low-damage etch of sensors, quantum dots, and HEMT. It features high coupling efficiency and very good ignition behaviour for processing a large variety of materials and structures. Substrate temperature setting and stability during the plasma etching processes are demanding criteria for high-quality etching. The substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range. Applications like recess and mesa etch in compound semiconductors demonstrate optimal process control, which is necessary for high device performance.

The SENTECH SI 500 ICP-RIE System represents the leading edge for ICP processing in both research and industry. The system comprises the ICP plasma source PTSA, a dynamic temperature-controlled substrate electrode, a fully controlled vacuum system, and a very easy-to-operate user interface. Configurations for processing a variety of materials, including but not limited to III-V and II-VI compound semiconductors (GaAs, InP, GaN, InSb), dielectrics, quartz, glass, silicon, silicon compounds (SiC, SiGe), and metals are achievable with this flexible and modular plasma etch system.

A large variety of substrates from 100 mm wafers up to 200 mm in diameter, as well as substrates on carriers, can be handled by the flexible load lock built into the SENTECH SI 500 ICP-RIE System. The single-wafer vacuum load lock guarantees stable process conditions and allows for straightforward switching of processes. We can offer different levels of automation ranging from vacuum cassette loading to one process chamber up to a six-port cluster configuration, with different etch and deposition modules offering high flexibility and high throughput. The system can also be incorporated as a process module on a cluster configuration. The SENTECH SI 500 ICP-RIE System is controlled by advanced hardware and SIA operating software, with a client-server architecture. A well-proven, reliable programmable logic controller (PLC) is used for the real-time control of all components.

The Inductively coupled (IC) PECVD system, SENTECH SI 500 D for high density, low ion energy, and low-pressure plasma deposition of dielectric films and low-damage, low-temperature deposition for passivation layers.

The SENTECH SI 500 D Inductively Coupled (IC) PECVD System features exceptional plasma properties like high density, low ion energy, and low-pressure plasma deposition of dielectric films and low-damage, low-temperature deposition for passivation layers. Low-stress ICPECVD of SiN_x as GaN HEMT passivation and SiO_x for trench filling can be performed with excellent uniformity and repeatability for applications in RF and power devices, photonics, and more with the system. The SENTECH Planar Triple Spiral Antenna (PTSA) source is a unique feature of our high-end ICP process systems. The PTSA source generates uniform plasma with high ion density and low ion energy suited for high-quality and low-damage inductively coupled PECVD deposition of SiO₂, Si₃N₄, a-Si, SiC, DLC, and doped layers. Low etch rate, high breakdown voltage, low stress, no damage of substrate, and very low interface state density down to deposition temperatures of less than 100 °C allow for outstanding properties of the deposited films.

Substrate temperature setting and stability during the plasma deposition processes are demanding criteria for high-quality etching. The substrate electrode with dynamic temperature control in combination with Helium (He) backside cooling and substrate backside temperature sensing provides high-quality layers, deposited even at low temperatures.

The SENresearch 4.0 spectroscopic ellipsometer covers the widest spectral range from 190 nm (deep UV) to 3,500 nm (NIR). High spectral resolution is offered to analyse even thick films up to 200 µm thickness using FTIR ellipsometry.

The SENTECH SENresearch 4.0 spectroscopic ellipsometer covers the widest spectral range from 190 nm (deep UV) to 3,500 nm (NIR). High spectral resolution is offered to analyse even thick films up to 200 µm thickness using FTIR ellipsometry. There are no moving optical parts during data acquisition for best measurement results. The Step Scan Analyser (SSA) principle is a unique feature of the SENresearch 4.0 spectroscopic ellipsometer. The extension of the SSA principle by the innovative 2C design allows measurement of the full Mueller matrix. The 2C design is a field upgradable and cost-effective accessory.