The Inductively coupled (IC) PECVD system, SENTECH SI 500 D for high density, low ion energy, and low-pressure plasma deposition of dielectric films and low-damage, low-temperature deposition for passivation layers.

The SENTECH SI 500 D Inductively Coupled (IC) PECVD System features exceptional plasma properties like high density, low ion energy, and low-pressure plasma deposition of dielectric films and low-damage, low-temperature deposition for passivation layers. Low-stress ICPECVD of SiN_x as GaN HEMT passivation and SiO_x for trench filling can be performed with excellent uniformity and repeatability for applications in RF and power devices, photonics, and more with the system. The SENTECH Planar Triple Spiral Antenna (PTSA) source is a unique feature of our high-end ICP process systems. The PTSA source generates uniform plasma with high ion density and low ion energy suited for high-quality and low-damage inductively coupled PECVD deposition of SiO₂, Si₃N₄, a-Si, SiC, DLC, and doped layers. Low etch rate, high breakdown voltage, low stress, no damage of substrate, and very low interface state density down to deposition temperatures of less than 100 °C allow for outstanding properties of the deposited films.

Substrate temperature setting and stability during the plasma deposition processes are demanding criteria for high-quality etching. The substrate electrode with dynamic temperature control in combination with Helium (He) backside cooling and substrate backside temperature sensing provides high-quality layers, deposited even at low temperatures.